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| J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Discrete POWER & Signal Technologies J111 J112 J113 MMBFJ111 MMBFJ112 MMBFJ113 G D G S TO-92 D SOT-23 Mark: 6P / 6R / 6S S N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,T stg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25C unless otherwise noted Parameter Value 35 - 35 50 -55 to +150 Units V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J111- J113 350 2.8 125 357 Max *MMBFJ111 225 1.8 556 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." (c)1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage I G = - 1.0 A, VDS = 0 VGS = - 15 V, VDS = 0 VDS = 5.0 V, ID = 1.0 A J111 J112 J113 - 3.0 - 1.0 - 0.5 - 35 - 1.0 - 10 - 5.0 - 3.0 1.0 V nA V V V nA ID(off) Gate-Source Cutoff Voltage VDS = 5.0 V, VGS = - 10 V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 VDS 0.1 V, VGS = 0 J111 J112 J113 J111 J112 J113 20 5.0 2.0 30 50 100 mA mA mA rDS(on) Drain-Source On Resistance SMALL-SIGNAL CHARACTERISTICS Cdg(on) Csg(on) Cdg(off) Csg(off) Drain Gate & Source Gate On Capacitance Drain-Gate Off Capacitance Source-Gate Off Capacitance VDS = 0, VGS = 0, f = 1.0 MHz VDS = 0, VGS = - 10 V, f = 1.0 MHz VDS = 0, VGS = - 10 V, f = 1.0 MHz 28 5.0 5.0 pF pF pF *Pulse Test: Pulse Width 300 s, Duty Cycle 3.0% Typical Characteristics Common Drain-Source 10 - DRAIN CURRENT (mA) V GS = 0 V - 0.2 V Parameter Interactions r g fs - TRANSCONDUCTANCE (mmhos) 100 r DS TA = 25C TYP V GS(off) = - 2.0 V 100 DS - DRAIN "ON" RESISTANCE () 8 - 0.4 V 50 50 6 - 0.6 V 20 g fs I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA _ 20 4 - 0.8 V - 1.0 V D 2 - 1.4 V - 1.2 V 10 I DSS 10 I 0 0 0.4 0.8 1.2 1.6 V DS - DRAIN-SOURCE VOLTAGE (V) 2 5 _ 0.5 _ _ 1 2 5 V GS (OFF) - GATE CUTOFF VOLTAGE (V) _ 5 10 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch (continued) Typical Characteristics (continued) Transfer Characteristics 40 I D - DRAIN CURRENT (mA) VGS(off) = - 3.0 V - 55C Transfer Characteristics 16 I D - DRAIN CURRENT (mA) VGS(off) = - 1.6 V - 55C 25C 125C V DS = 15 V 30 25C 125C VGS(off) = - 2.0 V 12 20 125C 25C - 55C 8 V GS(off) = - 1.1 V 125C 25C - 55C 10 V DS = 15 V 4 0 0 -1 -2 -3 VGS - GATE-SOURCE VOLTAGE (V) 0 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) - TRANSCONDUCTANCE (mmhos) Transfer Characteristics - TRANSCONDUCTANCE (mmhos) 30 VGS(off) = - 3.0 V - 55C 25C 125C Transfer Characteristics 30 V GS(off) = - 1.6 V - 55C 20 V GS(off) = - 2.0 V - 55C 25C 125C 20 25C 125C V GS(off) = - 1.1 V 10 10 - 55C 25C 125C V DS = 15 V V DS = 15 V fs g 0 -1 -2 VGS - GATE-SOURCE VOLTAGE (V) -3 g 0 fs 0 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) r DS - DRAIN "ON" RESISTANCE ( ) On Resistance vs Drain Current 100 V GS(off) TYP = - 2.0V Normalized Drain Resistance vs Bias Voltage r DS - NORMALIZED RESISTANCE 100 50 20 10 5 2 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) 1 V GS(off) @ 5.0V, 10 A 125C 50 25C 125C - 55C V GS(off) TYP = - 7.0V r DS r DS = VGS 1 -________ V GS(off) 20 25C r DS @ V GS = 0 - 55C 10 1 2 ID 5 10 20 - DRAIN CURRENT (mA) 50 100 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch (continued) Typical Characteristics (continued) 100 TA = 25C V DG = 15V f = 1.0 kHz g os - OUTPUT CONDUCTANCE ( mhos) g fs - TRANSCONDUCTANCE (mmhos) Transconductance vs Drain Current Output Conductance vs Drain Current T A = 25C f = 1.0 kHz V DG = 5.0V 10V 15V 20V 20V 5.0V 5.0V 10V 15V 10V 15V 20V 100 10 V GS(off) = - 5.0V 10 V GS(off) = - 1.4V V GS(off) = - 3.0V 1 V GS(off) = - 0.85V V GS(off) = - 2.0V 1 0.1 1 I D - DRAIN CURRENT (mA) 10 0.1 0.01 0.1 I D - DRAIN CURRENT (mA) 10 Capacitance vs Voltage 100 Noise Voltage vs Frequency 100 e n - NOISE VOLTAGE (nV / Hz) 50 C is (C rs ) - CAPACITANCE (pF) V DG = 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f 1.0 kHz f = 0.1 - 1.0 MHz 10 10 5 I D = 10 mA I D = 1.0 mA C is (V DS = 0) C is (VDS = 20) C rs (V DS = 0) 1 0 -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) -20 1 0.01 1 10 f - FREQUENCY (kHz) 100 Noise Voltage vs Current e n - NOISE VOLTAGE (nV / Hz) 100 PD - POWER DISSIPATION (mW) V DG = 15V Power Dissipation vs Ambient Temperature 350 300 250 200 150 f = 10 Hz f = 100 Hz f = 1.0 kHz TO-92 10 SOT-23 100 50 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 f = 10 kHz f = 100 kHz 1 0.01 I D 0.1 1 - DRAIN CURRENT (mA) 10 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch (continued) Typical Characteristics (continued) Switching Turn-On Time vs Gate-Source Voltage t r(ON) ,t d(ON) - TURN-ON TIME (ns) 25 20 15 10 5 0 t r (ON) Switching Turn-Off Time vs Drain Current TURN-OFF TIME (ns) 100 80 60 40 20 0 t d(off) VGS(off) = -2.2V - 4.0V - 7.5V T A = 25C V DD = 3.0V V GS = -12V t (off) t d(off) DEVICE V GS(off) INDEPENDENT V DD = 3.0V t r APPROX. I D INDEPENDENT V GS(off) = 3.0V T A = 25C I D = 6.6 mA 2.5 mA - 6.0V t d (ON) V GS = -12V 0 V GS(off) -2 -4 -6 -8 -10 - GATE-SOURCE CUTOFF VOLTAGE (V) t d(OFF) ,t OFF - 0 2 4 6 8 I D - DRAIN CURRENT (mA) 10 |
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